Search results for " point defect"
showing 10 items of 27 documents
Temperature dependance of the generation and decay of E’ centers induced in silica by 4.7eV laser radiation
2009
We report a study of the generation of silicon dangling bonds (E' centers) induced in fused silica by 4.7 eV laser irradiation in the 10 200 K the induced defects undergo a post-irradiation decay due to their reaction with mobile H(2). The interplay between generation and annealing gives rise to a bell-shaped temperature dependence of the concentration of induced E' centers, peaking at 250 K
Investigation on the microscopic structure of E' center in amorphous silicon dioxide by electron paramagnetic resonance spectroscopy
2006
The E′δ center is one of the most important paramagnetic point defects in amorphous silicon dioxide ( a-SiO 2) primarily for applications in the field of electronics. In fact, its appearance in the gate oxide of metal-oxide-semiconductor (MOS) structures seriously affects the proper work of many devices and, often, causes their definitive failure. In spite of its relevance, until now a definitive microscopic model of this point defect has not been established. In the present work we review our experimental investigation by electron paramagnetic resonance (EPR) on the E′δ center induced in γ-ray irradiated a-SiO 2. This study has driven us to the determination of the intensity ratio between…
First Principles Calculations of Atomic and Electronic Structure of Ti3+Al- and Ti2+Al-Doped YAlO3
2021
M.G.B. appreciates support from the Chongqing Recruitment Program for 100 Overseas Innovative Talents (grant no. 2015013), the Program for the Foreign Experts (grant no. W2017011), Wenfeng High-end Talents Project (grant no. W2016-01) offered by the Chongqing University of Posts and Telecommunications (CQUPT), Estonian Research Council grant PUT PRG111, European Regional Development Fund (TK141), and NCN project 2018/31/B/ST4/00924. This study was supported by a grant from Latvian Research Council No. LZP-2018/1-0214 (for AIP). Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Program H202…
O2 Loaded Germanosilicate Optical Fibers: Experimental In Situ Investigation and Ab Initio Simulation Study of GLPC Evolution under Irradiation
2022
International audience; In this work we present a combined experimental and ab initio simulation investigation concerning the Germanium Lone Pair Center (GLPC), its interaction with molecular oxygen (O2), and evolution under irradiation. First, O2 loading has been applied here to Ge-doped optical fibers to reduce the concentration of GLPC point defects. Next, by means of cathodoluminescence in situ experiments, we found evidence that the 10 keV electron irradiation of the treated optical fibers induces the generation of GLPC centers, while in nonloaded optical fibers, the irradiation causes the bleaching of the pre-existing GLPC. Ab initio calculations were performed to investigate the reac…
Properties and generation by irradiation of germanium point defects in Ge-doped silica
2012
Ge doped amorphous silicon dioxide (Ge doped silica) has attracted the attention of researchers for more than 50 years. This material is used in many different technological fields from electronics, to telecommunication, to optics. In particular, it is widely used for the production of optical fibers and linear and nonlinear optical devices. The optical fibers, which allow to transmit optical signals with high speed avoiding interferences, are constituted by two regions with different refractive index values: core (inner part) and cladding (external part). To increase the refractive index of the core with respect to that of cladding, Ge doping of silica is commonly used. Moreover, in the Ge…
Wide range excitation of visible luminescence in nanosilica
2010
The visible luminescence of nanometer-sized silica particles (7 nm mean diameter) was investigated using time resolved spectroscopy. This luminescence is characterized by a wide excitation in the visible and ultraviolet range. The emission spectrum is centred at 2.72 eV with a full width at half maximum of 0.70 eV when excited above 3.5 eV, whereas it progressively empties on the high energy side when excited below 3.5 eV. Moreover, the lifetime falls in the ns timescale and decreases on increasing the emission energy. These features are due to the exceptionally broad inhomogeneous distribution of the emitting centres peculiar to the silica nanoparticles. © 2010 Elsevier B.V. All rights res…
Ge-doped silica nanoparticles: production and characterisation
2016
Silica nanoparticles were produced from germanosilicate glasses by KrF laser irradiation. The samples were investigated by cathodoluminescence and scanning electron microscopy, providing the presence of nanoparticles with size from tens up to hundreds of nanometers. The emission of the Germanium lone pair center is preserved in the nanoparticles and atomic force microscopy revealed the presence of no spherical particles with a size smaller than ~4 nm. The absorption coefficient enhancement induced by Ge doping is reputed fundamental to facilitate the nanoparticles production. This procedure can be applied to other co-doped silica materials to tune the nanoparticles features.
The role of impurities in the irradiation induced densification of amorphous SiO(2).
2011
In a recent work (Buscarino et al 2009 Phys. Rev. B 80 094202), by studying the properties of the (29)Si hyperfine structure of the E'(γ) point defect, we have proposed a model able to describe quantitatively the densification process taking place upon electron irradiation in amorphous SiO(2) (a-SiO(2)). In particular, we have shown that it proceeds heterogeneously, through the nucleation of confined densified regions statistically dispersed into the whole volume of the material. In the present experimental investigation, by using a similar approach on a wider set of materials, we explore how this process is influenced by impurities, such as OH and Cl, typically involved in relevant concent…
Pulsed X‐Ray Radiation Responses of Solarization‐Resistant Optical Fibers
2018
International audience; The transient radiation‐induced attenuation (RIA) of two different versions of pure‐silica‐core (PSC) multimode optical fibers (so‐called “solarization‐resistant” fibers) exposed to nanosecond 1 MeV X‐ray pulses are investigated. On‐line RIA spectra measurements at both room temperature (RT) and liquid nitrogen temperatures (LNT) in the range 1–3.5 eV are performed. Following the RIA kinetics, the properties of the metastable defects that are bleached just after the pulse are discussed. The spectral decomposition of the RIA is performed using known Gaussian bands associated to point defects absorbing in this spectral range. For both fiber types, the generation and th…
Coupled irradiation-temperature effects on induced point defects in germanosilicate optical fibers
2017
International audience; We investigated the combined effects of temperature and X-rays exposures on the nature of point defects generated in Ge-doped multimode optical fibers. Electron paramagnetic resonance (EPR) results on samples X-ray irradiated at 5 kGy(SiO2), employing different temperatures and dose rates, are reported and discussed. The data highlight the generation of the Ge(1), Ge(2), E0 Ge and E0 Si defects. For the Ge(1) and Ge(2), we observed a decrease in the induced defect concentrations for irradiation temperatures higher than *450 K, whereas the E0 defects feature an opposite tendency. The comparison with previous post-irradiation thermal treatments reveals peculiar effects…